Low voltage operating organic light emitting transistors with efficient charge blocking layer

Charge injection/blocking layers play important roles in the performances of organic electronic devices. Their incorporation into organic light emitting transistors has been limitted, due to generally high operating voltages (above 60 V) of these devices. In this work, two hole blocking molecules are integrated into tris-(8-hydroxyquinoline) aluminum (Alq₃) based light emitting transistors under operating voltage as low as 5 V. The effects of hole blocking and electron injection are decoupled through the differences in the energy levels. Significantly improved optical performance is achieved with the molecule of suitable energy level for electron injection. Surprisingly, a decreased performance is observed in the case of another hole blocking molecule evidencing that charge injection overweighs charge blocking in this device architecture.     

Intrinsic Defect Limit to the Growth of Orthorhombic HfO2 and (Hf,Zr)O2 with Strong Ferroelectricity: First-Principles Insights

It is believed that promoting the fraction of ferroelectric orthorhombic phase (o-phase) through O-poor growth conditions can increase the spontaneous polarization of HfO₂ and (Hf,Zr)O₂ thin films. However, the first-principles calculations show that the growth may be limited by the easy formation of point defects in the orthorhombic and tetragonal phases of HfO₂, ZrO₂, and (Hf,Zr)O₂. Their dominant defects, O interstitial (O_i) under O-rich conditions and O vacancy (V_O) under O-poor condition, have low formation energies and quite high density (10¹⁶–10¹⁹ cm⁻³ for 800–1400 K growth temperature). Especially, O_i has negative formation energy in tetragonal HfO₂ under O-rich condition, causing non-stoichiometry and limiting the crystalline-seed formation during o-phase growth. High-density defects can cause disordering of dipole moments and increase leakage current, both diminishing the polarization. These results explain the experimental puzzle that the measured polarization is much lower than the ideal value even in O-poor thin films and highlight that controlling defects is as important as promoting the o-phase fraction for enhancing ferroelectricity. The O-intermediate condition (average of O-rich and O-poor conditions) and low growth temperature are proposed for fabricating HfO₂ and (Hf,Zr)O₂ with fewer defects, lower leakage current, and stronger ferroelectricity, which challenges the belief that O-poor condition is optimal.     

Stabilization of 6H-Hexagonal SrMnO3 Polymorph by Al2O3 insertion

We demonstrate the structural evolution of polymorphic phases in Al₂O₃-inserted SrMnO₃ ceramics synthesized by solid state reaction. While the 4H-hexagonal phase is predominant in pure SrMnO₃ ceramics, a small amount of 6H-hexagonal polymorph is identified in addition to the primary 4H-hexagonal SrMnO₃ and the secondary hexagonal SrAl₂O₄ phases in the as-sintered ceramics, evidenced by x-ray diffraction and subsequent Rietveld refinement analyses. The existence of the 6H-hexagonal SrMnO₃ phase is corroborated using Raman spectroscopy. The chemical compositions and electronic structures of the Al₂O₃-inserted SrMnO₃ compounds are also examined using energy dispersive spectroscopy and x-ray photoelectron spectroscopy, respectively. The first-principles calculations reveal that there is no clear difference between the total energies of 4H- and 6H-hexagonal polymorphs regardless of the presence/absence of Sr and oxygen vacancies. Possible origins are discussed with the estimation of actual strain based on the refined lattice parameter of 6H SrMnO₃.     

Nonlinear phase dynamics of ideal kink mode in the presence of shear flow

We investigate nonlinear phase dynamics of an ideal kink mode, induced by E × B flow. Here the phase is the cross phase(θ_c) between perturbed stream function of velocity■ and magnetic field ■, i.e. θ_c= θ_φ-θ_ψ. A dimensionless parameter, analogous to the Richardson number,■(γ_(kink): the normalized growth rate of the pure kink mode; ■: normalized E × B shearing rate) is defined to measure the competition between phase pinning by the current density and phase detuning by the flow shear. When R_i 1, θ_c is locked to a fixed value,corresponding to the conventional eigenmode solution. When R_i≤1, θ_c enters a phase slipping or oscillating state, corresponding to a nonmodal solution. The nonlinear phase dynamics method provides a more intuitive explanation of the complex dynamical behavior of the kink mode in the presence of E × B shear flow.     

仪器仪表产品脉冲耐压试验要求和保护器件的选择

仪器仪表产品的脉冲耐压试验是产品型式试验、例行试验中的基本内容。通过对GB4793.1标准的整理,归纳了仪器仪表产品的脉冲耐压试验要求。通过对试验方法和设备特性的梳理,总结了特性参数,并介绍了应对脉冲耐压试验可采取的保护器件的类别及选用方法。     

Composition and structure of arsenic–antimony alloy electrodeposited from acidic chloride solution

AsSb alloy (0.70–95.81 wt.% As) was prepared by electrodeposition in As(III) and Sb(III) contained electrolytes. The influence of electrolyte composition, hydrochloric acid concentration, and temperature on the composition and structure of AsSb deposits was studied. The electroreduction mechanism of As(III) and Sb(III) in hydrochloric acid solution was revealed via thermodynamic analysis. The results show that the increase of H⁺ concentration promotes the reduction of As(III), while the increase of Cl⁻ concentration significantly inhibits the reduction of Sb(III). As a result, the As content in deposits increases gradually with the increase of hydrochloric acid concentration. Simultaneously, the phase structure of AsSb deposits evolves from crystalline to amorphous. When the As content is 24.55–33.75 wt.%, AsSb mixed crystal is obtained. The electrolysis temperature has little effect on the deposits composition, but the structure of deposits evolves from crystalline to amorphous with decreasing the temperature.     

Research on phase shift characteristics of electromagnetic wave in plasma

The phase shift characteristics reflect the state change of electromagnetic wave in plasma sheath and can be used to reveal deeply the action mechanism between electromagnetic wave and plasma sheath. In this paper, the phase shift characteristics of electromagnetic wave propagation in plasma were investigated. Firstly, the impact factors of phase shift including electron density,collision frequency and incident frequency were discussed. Then, the plasma with different electron density distribution profiles were employed to investigate the influence on the phase shift characteristics. In a real case, the plasma sheath around the hypersonic vehicle will affect and even break down the communication. Based on the hypersonic vehicle model, we studied the electromagnetic wave phase shift under different flight altitude, speed, and attack angle. The results indicate that the phase shift is inversely proportional to the flight altitude and positively proportional to the flight speed and attack angle. Our work provides a theoretical guidance for the further research of phase shift characteristics and parameters inversion in plasma.     

Structure and thermoelectric properties of higher manganese silicides synthesized by pack cementation

Higher manganese silicides (HMS) are promising alternative materials for middle to high temperature thermoelectric applications as a low-cost, non-toxic and highly stable p-type leg. Many of the preparation methods that have been reported previously require long-time and energy consuming processes, as well as expensive equipment, and often do not result in a material of sufficient quality. In this study, the simple, cost-effective and eco-friendly technique of pack cementation is applied. HMS powders synthesized at different experimental conditions are studied and compared considering their structure, composition, short-term thermal stability in air and thermoelectric properties. X-ray diffraction analysis, X-ray photoelectron spectroscopy, scanning electron microscopy, thermogravimetry and thermoelectric measurements (in terms of Seebeck coefficient, electrical and thermal conductivity) were employed for the characterization of the material and evaluation of its performance. All samples were identified as HMS and only some negligible traces of MnSi were detected. They moderately oxidize when heated non-isothermally under air atmosphere up to 1473 K, while the presence of HMS remains dominant even at such high temperatures. Their thermoelectric properties were remarkable for an undoped material, with a maximum figure of merit (ZT) of 0.47 at 777 K. Pack cementation appeared to have a great potential as the synthesis route of high-efficiency HMS.     

基于Matlab的量子激光雷达稳频通信模拟系统设计

传统通信模拟系统设计较为复杂,导致模拟过程消耗能量较大,不能准确模拟稳频通信质量。因此,提出基于Matlab的量子激光雷达稳频通信模拟系统。由于振荡器是雷达形成初始信号源的基础,通过分析振荡电路与相位噪声,获得相位噪声函数与通信频率存在的关系;为确保通信过程的稳定,将准确性与稳定性作为信号质量的评价指标,并采用锁频环稳频技术计算频率偏移程度,根据PID控制算法控制频率,量子激光雷达稳频通信;利用Matlab确定激光器、探测器等硬件组成结构,通过时序与数字阵列的设置完成模拟系统设计。仿真结果表明所提系统结构简便、性能稳定,能够真实模拟出稳频通信的信号质量。     

Double pyrovanadates CaMgV2O7: Formation mechanism,phase structure,and thermodynamic properties

A double pyrovanadate CaMgV₂O₇ sample was synthesized via a facile solid-state route under an air atmosphere. The nonequilibrium formation pathways of the CaMgV₂O₇ were investigated via powder X-ray diffraction. A multistep reactions path (metavanadates–pyrovanadates–double pyrovanadate CaMgV₂O₇) was proposed to describe the formation of the CaMgV₂O₇ considering the thermodynamic and kinetic factors. The cell unit parameters of the CaMgV₂O₇ sample indicated the crystallization according to a monoclinic system with space group P12/c1(14), and the lattice parameters of a = 6.756 Å, b = 14.495 Å, c = 11.253 Å, β = 99.12, and V = 108.806 Å³. X-ray photoelectron spectroscopy also confirmed the +5 oxidation state vanadium in CaMgV₂O₇. The endothermic effects at 1033 and 1143 K were related to the incongruent melting and liquidus temperatures of CaMgV₂O₇, respectively. The comprehensive thermodynamic properties of CaMgV₂O₇ were established in both low- and high-temperature regions, utilizing a physical property measurement system and multi-high-temperature calorimetry (96 lines). The heat capacity (200 J mol K⁻¹) and entropy (198 J mol K⁻¹) at 298.15 K were computed based on the low-temperature heat capacity values, and the enthalpy of formation at 298.15 K was also estimated. The fitted high-temperature capacity can be used to obtain the changes in the enthalpy, entropy, and Gibbs free energy. This study is part of building a reliable thermodynamic database of the CaO–MgO–V₂O₅ system.